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氧含量对氮化铝陶瓷抗弯强度及热导率的影响

Effect of oxygen content on bending strength and thermal conductivity of aluminum nitride ceramics

  • 摘要:以Al 2O 3粉末和碳黑作为原料,采用碳热还原法并通过控制除碳工艺过程制备不同氧含量的AlN陶瓷粉末,高氧AlN粉末中氧质量分数为0.9%,低氧AlN粉末中氧质量分数为0.6%。以两种氧含量AlN陶瓷粉末为原料制备AlN陶瓷样品,采用三点弯曲法和3 ω法在77~350 K范围内测试了AlN陶瓷的抗弯强度和热导率,研究了氧含量对AlN陶瓷抗弯强度和热导率的影响,并与Al 2O 3陶瓷、Si 3N 4陶瓷的力学和导热性能进行对比。结果表明:高氧AlN陶瓷样品中第二相含量较多,低氧AlN陶瓷样品中第二相含量较少。第二相抑制了AlN晶粒的长大,起到细晶强化的作用,但是第二相的存在降低了声子的自由程,降低了热导率。在实验温度范围内,高氧AlN陶瓷样品抗弯强度高于低氧AlN陶瓷样品,热导率低于低氧AlN陶瓷样品。相比较于Al 2O 3陶瓷和Si 3N 4陶瓷,AlN陶瓷的室温抗弯强度比Al 2O 3陶瓷略高,但不如Si 3N 4陶瓷;AlN陶瓷的室温热导率比Al 2O 3陶瓷和Si 3N 4陶瓷高,达到了200 W·m −1·K −1。同时,AlN陶瓷在低温下也能保持高热导率和较高的抗弯强度,相对于Al 2O 3陶瓷和Si 3N 4陶瓷,其低温应用更加广泛。

    Abstract:AlN ceramic powders with the different oxygen contents were prepared by the carbon-thermal reduction method through controlling the carbon removal process, using Al 2O 3powders and carbon black as raw materials. The mass fraction of oxygen in high-oxygen AlN powders was 0.9%, and that in low-oxygen AlN powders was 0.6%. The AlN ceramic samples were prepared using these high-oxygen and low-oxygen AlN ceramic powders. The bending strength and thermal conductivity of the AlN ceramics were tested within the range of 77~350 K by the three-point bending method and the 3 ωmethod. The influence of oxygen content on the bending strength and thermal conductivity of AlN ceramics was discussed and compared with those of Al 2O 3ceramics and Si 3N 4ceramics. The results show that the content of the second phases is relatively high in the high-oxygen AlN ceramic samples, while it is relatively low in the low-oxygen AlN ceramic samples. The second phases inhibit the growth of AlN grains and play a role in fine-grained strengthening. However, the presence of the second phases reduces the free path of phonons and the thermal conductivity. Within the experimental temperature range, the bending strength of high-oxygen AlN ceramic samples is higher than that of low-oxygen AlN ceramic samples, and the thermal conductivity is lower than that of low-oxygen AlN ceramic samples. The room-temperature bending strength of AlN ceramics is slightly higher than that of Al 2O 3ceramics, but not as good as that of Si 3N 4ceramics. The room-temperature thermal conductivity of AlN ceramics is higher than that of Al 2O 3ceramics and Si 3N 4ceramics, reaching 200 W·m −1·K −1. Meanwhile, the AlN ceramics can maintain high thermal conductivity and relatively high bending strength at low temperatures. Therefore, compared with Al 2O 3ceramics and Si 3N 4ceramics, the AlN ceramics have a wider range of low-temperature applications.

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